الفهرس 
AcknowledgementOnly 14 pages are availabe for public view
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Abstract
present study introduces some proposed to obtain zero, temiparaturecoefficiQnt operation. fir FLT over a relatively wide range of temperature. 11-.c results were somewhat sufficient.The equationrelating the drain current, the gate-source voltage the pinch-off voltage is modiric-17 considering LntIFccthe voltage drop due to the bulck resistance of the part of the chwincl out of the depletion layer just before the drain.This modification gives an explimation for why the drain current slightly increases inthe the increase of the drain voltage in saturation region. In exnl nation for the constancy of the saturation OlrE;i.n current, in spite of the increase of the drain voltage is introlf-uccc-1. Wc, suppose that an oscillation occurs in the depletion area nnd hence the cross scction)abcut ameanconstantv,lucatafrequency ,’I.cpcn.-Iin., on the mobility of the charge carriers V GS7 vas and other rIrIOtors relating the dimensions of the device.