الفهرس 
AcknowledgementOnly 14 pages are availabe for public view
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Abstract
In this work the EBS principle is described and analyses that evaluate its capabilities and provid basis for device design are presented. Physical processes occuring therein and general considerations in designing the various elements of the device are discussed. Simulation techniques used in device design are presented. Semiconductor target diode tech¬nology is also survayed.
A Design for a pulse power amplifier that delivers 500 Volts across 50 Ohm resistive load is given. It is treated for two different modes of diode operation. In the frist case the diode operation is restricted to its linear-dyamic range. In the second case the diode operates beyond its linear dyna¬mic range, and also the diode is staturated by the current to a certain degree. By this technique two important advantages are obtained:
1-Diode dissipation/unit area at maximum output is reduced radically (from 286 watt/mm2 in the frist case to 24 watt/mm2 in the second case).
2-Sensitivity of diode dissipation to the change in the various environoments, and specially to the change in the electron beam current density, is considerably reduced.