الفهرس 
IntroductionOnly 14 pages are availabe for public view
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Abstract
Motivated by the merits of low power dissipation, ultra small size and high speed, many nanoelectronic devices have been demonstrated to ensure future progress. Single electron devices become one of the most important nanoelectronic devices due to their interesting electrical characteristics and behavior. Many research efforts moved to describe their electrical characteristics to use them with conventional electronic devices. Therefore, this thesis deals with modeling and simulation of such new electronic devices.
This thesis starts with describing single electron phenomena and discussing the most important theory (orthodox theory of single electronics) used in explanation of single electron devices behavior. With the aid of orthodox theory and the basic idea of electron transport through tunnel junctions, we present an equivalent circuit model for single electron tunneling junction (SETJ) taking into consideration the effect of temperature, tunneling resistance and junction capacitance. This model is validated by comparing its results with well known single electron simulator SIMON in two simple standard circuits (electron box and current biased tunnel junction).
This thesis also presents a study about different modeling techniques (Master equation and Monte Carlo algorithm) for single electron systems and the usage of these techniques to develop models for most widespread single electron devices. By applying these techniques in order to model the most used single electron device (single electron transistor (SET)), one can find that master equation gives better accuracy than Monte Carlo algorithm and takes less simulation time. Thereafter, many research efforts have been done to develop accurate models for SET using these techniques. These models take limited conditions in SET modeling to avoid numerical solution which cannot be implemented in SPICE simulators.
A new developed model for SET is also presented. This model is accurate for large range of bias voltage with any type of biasing. It takes the effect of background charges. It is implemented on SPICE to enable simulation with other electronic components like MOS devices. It is validated with comparing the results of symmetric and asymmetric SET device characteristics with SIMON simulator.
Finally, some single electron circuits are studied and simulated using our proposed model. These circuits are single electron inverter, NAND and OR gates.