الفهرس 
MODELING OF NANO-SCALE TRANSISTOROnly 14 pages are availabe for public view
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Abstract
The rapid progress of CMOS technology pushes the dimension of devices in
the nano scale range where ’quantwn effects start to become important.
Reduced channel lengths change the transport from drift diffusion to ballistic
where scattering is rare. DO MOSFET operating in the ballistic regime
differs from the common behavior in different aspects. The reduced silicon
thickness leads to energy quantization, structural and electrical confinement
of carriers. Much work was done to model these effects and rigorous
numerical simulations were obtained.
As numerical simulation is time consuming and not suitable for circuit
simulation, we proposed in this thesis a compact model where most of the
effects resulting from the reduced dimensions are taken into consideration.
The model uses a single expression for current for all regions of operation
including linear and saturation, subthreshold and high gate bias. This ensures
current continuity. The model is adjusted to be valid over a wide range of
silicon and oxide thickness. The model also is suitable for long and short
channel by use of tunable equation. A compact equation for direct tunneling
gate current is also proposed. This equation takes into account the energy
quantization and wave penetration at the oxide interface. The strength of the
model presented here is demonstrated by comparison with numerical
simulations. In fact, the analytic model gives strong agreement with
numerical simulations for both drain and gate current with and without the use of high K material