الفهرس 
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Abstract
n1e premise of this thesis is a systematic study of the preparation parameters on the properties of CdTe and Mo thin lilms that will result lately in the fahrication (II’ Mo/CdTciNi diode semiconductor radiation detector. Molybdenum (Mo) thin films have hcen deposited on soda-lime glass substrates using a DC magnetron sputtering system. Iheir electrical resistivity. their morphological. structural and adhesive properties ha vc been examined with respect to the deposition power. deposition time and substrate temperaturc. The electrical resistivity of the Mo films could be reduced by increasing any of the above parameters. Within the range of the investigated deposition parameters, the crystallites of the Mo lilms arc columnar and perpendicular to the plane of the substrate with a preferred orientation along the ( 110) plane. The Mo films adhesion to the soda-lime glass could he impnl\ed h~ increasing the suhstrate temperature. I\t a deposition power of 200 W. deposition time nf 20 min and suhstrate tempcrature of 450 ”c. Mo thin film having a prclCrrcd (lrientation along the ( 110) plane with thickness equal to 450 nm and electrical rcsistivity equal to I.H5 x I 0 In cm was ohtained. I\lso the mechanism of electrodeposition of CdTe films is studied. The experimental procedures carried out through this work with detailed descriptions and specifications nr circuits. cells. electrodes. chcmicals. solutions and instruments used arc illustrated. The crystal structurc and the preferential orientation of grains of CdTc films were investigated by XRD patterns. Deposits obtained galvanostatieally or potentinstatically or hy using the pulse tcchnique at 80 QC showed no sign of peaks corresponding to CdTe. Ilo\vcver peaks corresponding to Ni and Ni~x(:re2 were ohserved in these films. The compositionai analyses of the deposited CdTe Iilms were performed using the LDS techniquc. It \,;as round li’om the studies done on the electrodeposited CdTe lilms al HO °C on nickel slIhslralc that Ni dilTlIses causing the tetragonal Ni.l.xhle.> phase formation. l’otenti(lslalica\h (lll L’ li\1ll prepared on SS al deposition time of 2 hrs. TeO~ concentration \\as 0.1 :\.1. depllsilion temperature 130 ”c. and deposition potentials -600 m V shows clearly thc cubic-hexagnnal poly type peaks li’om the XRD patterns study and the Cd:!e I\t(~;, appmaches the I: I. Potentiostatically CdTe films prepared on Ni at deposition time of 2 hrs. 0.1 M leO: concentration. deposition temperature 130°C and deposition potentials -(lOO 111 V were Cd rich. It is very hard to clectro deposit CdTe on Ni at low lemperature less than 1300 C. :\Iso. pnlytypc cubic-hexagonal CdTe exhihiting the rods struclure was deposiled on 1\1n sllhstratc