الفهرس 
chapter 1Only 14 pages are availabe for public view
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Abstract
In this thesis, a design procedure for low profile high performance X-band oscillator is proposed. The oscillator is designed based on a new proposed cavity backed SIW resonator. Design and simulation of the proposed cavity backed SIW resonator are taken out for three different RT/Duroid substrates. It is found that the SIW technology and cavity backed structure have proven to be promising choices in the realization of the proposed X-band backed slot SIW cavity oscillator, because of their inherent low cost, low profile, light weight, good conformability and integration with planar circuit and high performance. The designed has been carried out in two steps. First, the SIW resonator is designed using a finite element method (FEM) based electromagnetic (EM) simulator (Ansoft HFSS). In a second step, the harmonic balance (HB) simulator of Agilent ADS is used for the nonlinear simulation of the oscillator circuit. To verify the simulation results, the proposed oscillator was fabricated and measured. The proposed X-band backed slot SIW cavity oscillator has been shown good phase noise, long time frequency stability, and good performance. Also an accepted agreement between the predict and measured results are observed.