الفهرس 
acknowledgmentOnly 14 pages are availabe for public view
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Abstract
Poly (o-toluidine) (POT) was synthesized by chemical oxidative polymerization of 0¬toluidine monomer in different aqueous solutions of dodecylbenzene sulfonic acid (DBSA), nitric acid, sulfuric acid or hydrochloric acid as a dopant. Doped shows a high degree of solubility at room temperature in formic acid, NMP and DMF. The enhancement of the solubility of POT may be due to the presence of methyl side chain group in benzene ring. Using surfactant dopant for POT improves the solubility in other organic solvents such as THF, cyclohexane, and dichlorobenzene. IR was used to characterize the prepared polymers. from spectrophotometer spectra it was found that conducting emeraldine salt of POT-DB SA was stable in NMP, THF or chloroform while dedoping process occurred partially in DMF. POT- HN03, POT- H2S04and POT- HCI are dedoped in NMP or DMF. The thermal stability of the polymers was investigated using TGA. POT-DB SA was found to be highly crystalline than POT- HN03, POT- H2S04 and POT- HCl. The scanning electron micrograph revealed granules and closed-packed structures and the size of the grain was about 3 micron for POT¬DBSA. The micrograph revealed more branching and less granules and the size of the grain was about 47nm for POT- HN03. The micrograph showed an agglomerated structure and the size of the grain was about 180 nm for POT-H2S04 and agglomerated structure for POT¬Hel and the size of the grain was about 60nm. The conductivity was 1.88xlO-3 S/cm for POT-DB SA, 1.75xl0-3 S/cm for POT- HN03, 4.62xlO-4 S/cm for POT- H2S04 and 3.35xl0-4 S/cm for POT - HCI at 1: 1 molar ratio of oxidant to o-toluidine and 0.18 M of dopant. Schottky diode based on POT-DB SA, POT- HN03, POT- H2S04 and POT- HCI was fabricated using Al as Schottky contact and Cu as an Ohmic contact.