الفهرس 
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Abstract
The main conclusions of this thesis can be summarized as follows:
The as- received powder of MV2B and the as-deposited thin films of MV2B were identified by XRD technique and the results showed that MV2B has an amorphous structure in its powder and as-deposited thin film forms.
Annealing of MV2B thin film at 433K partially transformed the amorphous structure of the as-deposited films of MV2B into nanocrystallites.
FTIR spectra in the spectral range 4004000 cm-1 for FTIR identified the bond type of MV2B and showed that there are no molecular structural changes neither upon deposition nor annealing of thin films.
The absorption and refractive indices are independent of film thickness.
Annealing MV2B film at 433K decreases the absorption index in absorbing and non- absorbing region of spectra.
The refractive index of MV2B decreases by annealing temperatures.
The obtained results of the AC conductivity showed that the real and the imaginary parts of dielectric constant decrease with increasing frequency and they increase with increasing temperature.
hybrid Au/MV2B/p-Si/Al heterojunction device was fabricated and showed low series resistance of 480Ω , high shunt resistance of 20KΩ ,
The device under illumination with light of intensity 30mW/cm2 gave the values: 0.4 V, 1.5mA, 0.294 and .78% for the open circuit voltage (Voc), short circuit current (Isc), fill factor (FF) and power conversion efficiency (η), respectively.