الفهرس 
coverOnly 14 pages are availabe for public view
 |  | from | 174 |  |  |
| | | from | 174 | | |
Abstract
The aim of this thesis is to study the transport properties of
GaAs, InP, GaInAs and InN such as the drift velocity, the drift mobility
and the average electron energy at high electric field using
ensemble Monte Carlo Simulation Technique. These transport
properties also calculated at different temperature and doping
values in order to show their effects. The included scattering
mechanisms in our work are polar optical phonon, ionized impurity,
acoustic phonon and intervalley phonon and the scattering rate of
these scattering mechanisms is calculated.
GaAs parameters are available and its band structure has
been assumed as parabolic for simplicity. InP has larger density of
states than GaAs and a corresponding higher electron phonon
scattering rate. InP and GaAs are large band gap materials, while
GaInAs and InN has small band gap. InN is a wurtzite semiconductor
so that its band structure is more complicated than the other three
materials where they are zincblende semiconductors. InN has the
greatest valley separation energy which makes it a stable material.
Also, the valley separation in GaInAs is greater than in InP while InP
valley separation is greater than GaAs. InN and GaInAs have a lower
effective mass and a higher drift velocity than GaAs and InP.
The peak steady state drift velocity is greatest in InN and occurs
at higher field value than in the other three compounds. The electron
velocity-field characteristics for GaInAs exhibit the same general
behavior as those obtained with GaAs. There are, however, several
notable differences. The negative differential mobility obtained with
GaInAs is larger than that obtained with GaAs at a given
temperature and field strength. GaInAs exhibits higher low-field drift
mobility and higher peak electron drift velocity than both GaAs and
InP while InN has the highest value of the peak electron drift velocity.
GaInAs also exhibits the lowest velocity at high fields while InP exhibits
the highest velocity at high fields.