الفهرس 
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Abstract
, Platinum (Pt) thin films used in implantable devices are typically
fabricated using physical vapour deposition (PVD) techniques [1] which
requires etching out the excess sputtered Pt raising out costs -and
complicated Pt recycling problems. In this work, we explore selective
electrochemical deposition (ECD) of Pt as an alternative for PVD Pt
interconnects, since it can significantly reduce costs owing to its high
selectivity. Initial studies of Pt film electrochemical nucleation and growth
are done on blanket TiN/Si wafer coupons. Pt is plated on biocompatible
substrates such as TiN and Au from dihydrogen dinitrosulfatoplatinate (11)
and hexachloroplatinic acid electrolytes using different plating parameters
such as current density, surface pre-treatments, different plating
techniques, bath pH, etc. After optimizing the parameters and optaining
smooth and relatively thick Pt films with good adhesion, physico-chemical
characterization are then performed. The goal is to compare between the
ECD and PVD Pt thin films and to check for any chemical impurities that
might exist together with film crystallinity that might affect the electrical
conductivity greatly. Subsequently interconnects fabrication was achieved
by selectively plating Pt on TiN/polyimide/glass substrates where the TiN
was covered with patterned resist. After resist strip, scanning electron
microscopy (SEM) together with DEKT AK surface profiling were used to
analysis the ECD Pt lines and to qualify the uniformity of plating process.
After plasma etching of the conductive seed layer, four-point probe
measurements were done to qualify the electrical properties of the lines
and if it is matching with the power requirements of the final application.
Based on all these results we discuss the potential use of ECD Pt as
interconnects material in implantable microelectronic devices.