الفهرس 
Theoretical ApproachOnly 14 pages are availabe for public view
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Abstract
We first succeeded on growing a single crystals of TlBiTe2 compound. This was done with the aid of the famous Bridgman technique. TlBiTe2 crystals were selected for the present investigation for their known properties. This enabled us to compare influence of the growth conditions on the crystal quality. Mechanical and chemical treatments were studied as an important factors for improvement of the grown crystals quality.
Results and measurements show that this compound is n-type semiconductor. Also it is concluded that it is a very sensitive semiconductor. Mobility of the charge carriers was improved as a result of the surface treatment. Also many physical properties were estimated from the present work such as the energy gap, depth of impurity level, effective mass of the charge carriers, the diffusion length and the diffusion coefficient.
Another unique experiment was done in this thesis. It is the Marangoni effect. This was achieved by choosing two different ampoules (crucibles) diameters. The influence of the ampoule diameter as a function of the thermal gradient was studied in more details bearing in mind investigating the Marangoni effect for the first time and fiend its effect on the physical properties of the grown crystals.