الفهرس 
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Abstract
Single Electron technology is becoming an important area of research that attracted large number of scientists, engineers and students. That because it complies the required increase in integration and speed and decrease in power consumption. It enables us to control the motion and location of single or many electrons in nanometer scale. Its unique characteristics make it promising candidate for a wide range of future applications.Among single electron devices, Single Electron Transistors (SETs) have attracted much interest because of their promising characteristics such as size in nanometer scale, very high speed, very low power consumption and ability to integrate with other technologies. Single electron transistor consists of three electrodes known as drain, source and gate. The drain and source electrodes are connected to small conducting region called island through tunnel junctions, while the gate electrode is connected to island through normal capacitor. Tunnel junction is considered as a very small piece of conductor divided into two parts separated by ultrathin insulating material. Electrons can only enter or exit the island through source or drain tunnel junctions.The thesis is organized as follows:Chapter 1: General introduction to nanotechnology and its applications is introduced. Next, historical review for electronics in general and its development from first transistor invented in Bell Laboratories to nowadays transistors is made. Short description for single electron devices is investigated.Chapter 2: A more detailed description of Single Electron Devices (SED) such as Double Tunnel Junction Systems (DTJ), Single Electron Box (SEB), Single Electron Linear Threshold Gate (SE-LTG), Single Electron memory (SEM) and Single electron transistor (SET) is introduced.Chapter 3: Computer Aided Design (CAD) tools for single electron devices simulation are investigated. There are mainly three techniques to simulate SED devices. They include the Monte-Carlo (ME) technique, Spice macro modeling technique and master Equation (ME) technique.Chapter 4: A deep analysis of single electron transistor is presented, followed by detailed description of previously reported compact analytical SET models. Chapter 5: A computationally efficient model of single electron transistor within the orthodox theory has been developed which can capture unlimited range of drain to source voltage. A comparison regarding the different characteristics of SET made between our model and Monte Carlo simulator SIMON shows perfect accordance. Also, detailed comparison between our model and previously reported model is introduced. Finally, the contribution of thermionic current is introduced.Chapter 6: Conclusion and plan for future work.