الفهرس | Only 14 pages are availabe for public view |
Abstract In the present work, a new highly user-oriented device simulator was developed for the study of transport properties of planar MOSFETs by the solution of basic semiconductor equations in two dimensions. This device simulator works under MATLAB environment. Perfect physical models for Drift-Diffusion equations including band-structure parameters, carrier mobility, and Generation-Recombination rates were implemented into the simulator. The developed simulator works at different levels of sophistication (modes). The simplest mode solves in one dimension, another one solves in two dimensions, third mode takes into account generation mechanism, and the most sophisticated mode takes into account carrier heating. New model for Gate Induced Drain Leakage (GIDL) phenomenon, ·observed in thin oxide MOSFETs, was proposed and implemented into the simulator. Through the interactive easy to-use MATLAB graphical user interface system, the user of the simulator can view the distribution of many local parameters such as, doping concentration, electrfc potential, electric field, carrier mobility, and carrier concentrations. Output drain current characteristics against both drain voltage and gate voltage are available, as well. Sample outputs arc given ·accompanied with complete parametric study of GIDL current. |