الفهرس 
chapter 1Only 14 pages are availabe for public view
 |  | from | 177 |  |  |
| | | from | 177 | | |
Abstract
This thesis proposes a simplified and accurate analytical technique for high freqency charachterization of the resonant tunneling diode (RTD).
An euipvalent circuit of the RTD that consits of a parellel combination of voltage and frequency dependent conductance and capacitance is formulated to be used during the simulation of the RTD in high frequency applications. the correcteness of the proposed analytical technique is verified through a lot of simulation experimental work including the high frequecy range of many characteristic aspectsof the RTD. the simulation redults obtained have been compared with those concluded and repoted in the literature.