الفهرس | Only 14 pages are availabe for public view |
Abstract Bulk alloys of CuIn1-xGaxSe2 (CIGS) with Ga- incorporation ratio x= Ga/ (Ga+In) equal to 0.1, 0.2, 0.3, 0.4 and 0.6 have been prepared by the melt quench technique followed by sintering process. The CIGS thin films have been deposited on clean microscope glass substrates with different thicknesses (t) in the range of 100- 1000 nm using the thermally evaporated technique in a vacuum of 3x10-4 mbar from their origin bulk alloys. X- ray diffraction (XRD), scanning electron microscope (SEM) as well as energy dispersive analysis of X- ray (EDAX) investigations before and after annealing have been used to inspect the CIGS internal microstructure, surface morphology and stoichometries of CIGS component elements respectively. Lnσ vs. plots in 300 ≤ Tamb (K) ≤ 560 range were employed to ascertain the material behavior whether it is metallic or semiconducting one, and to determine its thermal activation energy. Values of Seebeck coefficient (SRT) and electrical conductivity (σRT) measured at room temperature (RT = 300 K) were utilized to determine and, then, examine the variations of the parameters, namely, Fermi energy (Ef), carrier concentration (N), mobility (µ), diffusion coefficient (D) as well as mean free path (ℓ) with Ga- ratio (x), thickness (t) and annealing temperature |