الفهرس 
صفحة العنوانOnly 14 pages are availabe for public view
 |  | from | 130 |  |  |
| | | from | 130 | | |
Abstract
The increasing demand for the highly efficient communication and
computations imposes severe constrains on the metal-oxide-
semiconductor field-effect-transistor (MOSFET), which is the essence
of the modem-electronics. ’1he extreme downscaling of the traditional
MOSFET to achieve higher density, faster speed, and lower cost; faces
several challenges that degrade device performance. To overcome the
performance-degradation problems and extend semiconductor
technology revolution, alternative non-classical devices such as gate-all-
around (GAA) transistors have been recommended. GAA devices are
believed one of the hopeful structures that can miniaturize
complementary MOS (CMOS) technology deeper into nanometer scale.
GAA devices have excellent control over channel by the gate, better
short-channel performance, high on-state current capability, and very
low leakage-current than other multi-gate devices. Moreover, new
materials such as III- V semiconductors, high permittivity dielectrics,
and metal gates have been suggested besides the standard materials to
improve device performance.
The thesis concentrates on the behavioral modeling and
characterization of GAA devices, aiming to extract their physical
characteristics and provide a tool for simulating GAA transistors- based
circuits. The thesis begins by the analytical solution of the three-
dimensional (3D) Poisson’s equation with mobile-carriers to accurately
figure out the potential distribution at any point in the lightly-doped (LD)
long-channel (LC) square (S) GAA MOSFETs. Based on the developed