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Abstract
First of all, we have introduced a simplified neuron model, however it produces an action potential that follows the original Hodgkin and Huxley model. The genetic optimization algorithm has been used in order to enhance the modulating parameters of the proposed model. The ion channel equations in the simplified neuron model have been generalized to represent a simplified memristor model that could approximate different experimental results of memristive devices. This approach could be considered as a step forward in the creation of a nano-scale memristor based neural network