الفهرس 
SURVEY OF TRADITIONAL MAGNETODETECTORS AND PRESENTATION OF PROPOSED ORIGNAL MOSFET INTEGRATED ELEMENTOnly 14 pages are availabe for public view
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Abstract
This work introduces two orginal entirely-integrated
CMOS magnetodetectors which are based on carr-ier heating
phenomena associated with the short channel MOSFET devices.
The first is based on hot carrier injection from the MOSFET
channel into a splitted U-shaped floating gate.
The other is
based on hot carrier injection into the substrate and the
collection of these carriers by two seperate Hall drains. The
general
approaches to the proposed magnetodetectors are
related to the resultant magnetic lorentz force (Hall effect,
magnetoresistance effect,
carrier deflection). This magnetic
lorentz force is produced by the applied magnetic field to be
measured. Theory,
design considerations, modeling, simulation
and experimental results have been inculded.
A new and
very precise technique employs a MOS transistor which is
forced to operate in its weak inversion region of operation.
In this case the channel current varies exponentially with
the gate to source voltage and the power consumption is very
low. These proposed magnetodetectors are characterized by the
following features:
a) Very high sensitivity (40 times greater than that
which have been already proposed in Literatures).
b)
Very wide dynamic range of measurement
-3
10 T).
c) A single 5v power supply is needed.
A
-9
(10
to e) Compatible with recent IC secalling-down trends.
f) Automatic scale changing can be provided.
g) Control able detector sensitivity.
These mangetodetectors are very needed
following applications:
a) Determination and acquisition of the recombination
parameters related to the volume or the surface of
polcrystalline silicon.
b) Prediction of anisotropy in thin films.
c)
Ocean and air navigation.
d) Detection of radi a’tt on leakage and
e) Realization of multilevel digital circuits.
A new circuit configuration for a frequency comparator
FC, to be used for detecting the polarity of the applied
magnetic field, is also introduced. This frequency comparator
is characterized by the following advantages
a)
Integrated in MOSFET technology on a single chip.
b) Compatible with VLST implementation.
c) Very good linearity.
d) Very wide dynamic range of operation.
Theory, principle of operation, modeling, simUlation
and experimental results related to the proposed frequency
comparator are also involved.
B
for
the Our simulation and experimental results show that the
sensitivity and the dynamic range of ffieasurement of the
proposed magntetodetectors are dependent on device geometry,
biasing conditions, doping profile and surface doping level .