الفهرس | Only 14 pages are availabe for public view |
Abstract It is the purpose of this thesis to give a detailed study and analysis of a new non-volatlle CMOS EEPROM memory cell. It is based on a non destructive mechanism of carrier lieating and injection into the gate oxide. It employs a double-gate CMOS inverter. Tl1is or-Iei na i cell Is faster, much more rel1able and slmpler than all generatlons which nave already been rea 11zed. Circuit design allows programming and erasing w i t.n a si ns i e supply voltage of 5V (crianneI length L ~ 2 IJm). The clrcult latches the Input data owing to the bidirectional hot carrier gate current. In chapter 1 the thesls presents a survey of the d1fferent types and generations of the memory cells. It studies the effects of the new technologles on the performance and characteristics of these cells. Study and characterization of this CMOS EEPROM requires a good Knowledge of the carrler heatlng phenomena, the hot carrler gate current and the effects of scaling-down on the MOSFET parameters and the performance and characterlstlcs of the memory cell. We nav e al so to reveal the ef f ect s of voltage and temperature stress1ng on the memory performance and characterlstlcs through a detailed reliabillty study 2 We introduce in chapter 2 a simulat10n techn1que to compute the output voltage Vo(t) of the memory cell during programming and erasing cycles and also the programming time tp. We propose also two analytical models, one for the evaluation of the threshold voltage shift and the other to predict the mobil1ty degradation aSSOCiated w1th device scal ing-down. In chapter 2 we also develop a new monochannel MOS EEPROM wh1ch acq\lires the CMOS EEPROM and, at the main advantages of the presented same t1me, 1s free from the drawbacks of the CMOS technolgy used 1n fabricating the presented EEPROM. In chapter 3 we present the experimental and simulation results. We d1scuss these results and summarize the main features of the new CMOS EEPROM we presented. In chapter 4 the thes1s presents conclusions of the present study and proposes new po1nts for the future research. |