الفهرس 
SMALL_SIGNAL THEORY OF THE P. E.M DEVICES USIN.G NORMAL SEMICONDUCTORS.Only 14 pages are availabe for public view
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Abstract
The present thesis deals with a specific type
of· electron devices, the Hall effect devices. A
general theory for these devices based on BoLt ze an t s
transport equation is introduced and semiconductor
,
characteristics which are relevant for these devices
•
n~e optimized, it was shown that narrow-gap high
mobili ty semiconductors like InSb are the most suitable
for these applications. The above study is io-
e Luded in chapter (I).’
Photoelectromagnetic devices (Pl!1-4 devices) wh Lcn
are in effect Hall effect devices are studied in
chapter (II). Atheory for these devices under small
aic;n;ll condi.t aons is given and the operational chara-
cre r i.sua cs (reuponse and figures of merit) are co:nputed
and analysed for a P~ device made up of int~lnsic
InSb and operating at 77°K. The dependence of theSe
devices on magnetic field intensity, surface recombi-
nab Lon velocity, and device width (thickness) is
~horoughly investigated.
chapter (III) investi~ates the large sLgnaL Op0-
J’<..:.tiol)of PE’Nl devices using n o.cmaL s euuc onduc t oae . I.
tlLeOl’Y was formu Laued ; it uti lized the J ii
~I
theory for r-ecombInac ccn c ente ns , Carrit:)r-ce~;r:i..er
scattering effects which :JaY appe az at Lange .signals
were also :1-nvestigatec.. T~e theoIj’ was tiner: a’p91::.I~:l
to the intrinsic InSb dovaces operating at 77 OK o:Jl:
the operational characteri~tics were investigated.
’lhe r6spqnse VJC,S found be be independent of t~~,ruliu···
t Lon intensity. 3imi18.J.’i~ies and differences betv’c en
the small and Lange ;5 igncJ. _(
rmance s are s tuda r d
and exp Iu ineo..
Chatper (IV) c..eals wit!:. the use of ta e !:~.:;(} ’~tJ.y
introduced’ graded band gap (G-BG) senuc ondu cnors i.”~;
P.EM devd.ces •. These semiconductors have buil ~.-i~~
oIe cto.Lc fields which j ut.e nacf with ruotion of photc-
,
gene~ated carriers. A sma~l sign~i theory is first
formulated and then operational criar ac tiez-Lst Lcs are
coiupubed , The spe ctral responses of these devices
are· studied for di;t.·fel.’~nt bulk rec cmbtn at t on ::·e.t(J~;,
. .
sur-race recombinati OD z abe e and band edge gL’C\(.li ell i;l”.l •
Gonditions for sign reversals in the rE:SpOIU3e UI’l.
uhown , ’
Chapter gives a large signal an aLysLs c.{.t’l·:M devices using GBGs euri.cor.duc’t ors , Th-a ope ru characteristics are then computed. Similarities and
differences with the results of chapter (IV) are then
discussed.
In ohapter (VI), the major conclusions out of
the present study are given. Proposals for future
investigations are sug@Bsted.