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Abstract
We study the effect of Micro wave weapon that generate high voltage that effect on the performance of the electronic devices
The high voltage which generated from the electro magnetic plus makes damage in crystal structure for the material that used in the devices fabrication and generates different kind of recombination
The device transport equations are solved simultaneously to get the current voltage characteristic of the device using finite difference method. The device characteristics is studied under different material type, geometrical structure, and doping concentration. The results show that the material type has great limiting factor for the effect of microwave weapons. The higher doping concentration and geometrical parameter gives better protection
The materials simulated in this paper are silicon Si, gallium arsenide GaAs, indium phosphate InP , and gallium nitride GaN. Geometrical parameters are considered the thickness of the p and n layers. The doping concentration is substituted 1015, 1016 and 1017 cm-3. The results conclude that the GaN material has a better performance under effect of high current conditions. We suggest uses GaN material with large doping length and concentration to counteract the catastrophic effect of microwave weapons.