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Abstract The electrical properties of heterojunction solar cells consisting of a very thin silicon oxide layer (I-layer) sandwiched between indium-tin oxide (ITO) and p-type silicon have been thoroughly studied. It has been found that the potential DROP across the I-layer is much smaller than the potential DROP on the space charge region in the p-silicon. Therefore a field-induced n-p junction will be formed in the P-silicon. The dark current of this junction is dominated by carrier recombination the and by current space charge region at lower current electron tunneling across the I-layer densities. The current de~sity at diode turns over from recombination-limited to tunneling limited regime decreases drastically with the I-layer thickness. The spectral response of these cells is better than the conventional cells at shor.t er wavelengths. While the open circuit voltage decreases weakly with the I-Layer thickness, d, the short circuit current, will be reduced from· the photocurrent to nearly zero if d is varied from 16 AD to 18 AD. The conversion effi- ciency behaves similarly as the shortcircuit current. Good agreement has been found between the theoretical and the experimental results. densities at higher which the |