الفهرس | Only 14 pages are availabe for public view |
Abstract This work introduces two orginal entirely-integrated CMOS magnetodetectors which are based on carrier heating phenomena associated with the short channel MOSFET devices. The first is based on hot carrier injection from the MOSFET channel into a splitted U-shaped floating gate. The other is based on hot carrier injection into the substrate and the collection of these carriers by two seperate Hall drains. The gener al approaches to the proposed magnetodetectors are related to the resultant magnetic lorentz force (Hall effect, magnetoresistance effect, carrier deflection). This magnetic lorentz force is produced by the applied magnetic field to be measured. Theor-y, design considerations, modeling, simula- tion and experimental results have been inculded. A new and very precise technique employs a MOS transistor which is forced to operate in its weak inversion region of operation. In this case the channel current varies exponentially with the gate to source voltage and the power consumption is very low. These proposed magnetodetectors are characterized by the following fea~ures: a) Very high sensitivity (40 times greater than that which have been already proposed in Literatures). b) Very wide dynamic range of measurement ( 10 to -3 10 T). c) A single 5v power supply is needed. |