الفهرس 
SURVEY OF TRADITIONAL MAGNETODETECTORS AND PRESENTATION OF PROPOSED ORIGINAL MOSFET INTEGERATED ELEMENT.Only 14 pages are availabe for public view
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Abstract
This work introduces two orginal entirely-integrated
CMOS magnetodetectors which are based on carrier heating
phenomena associated with the short channel MOSFET devices.
The first is based on hot carrier injection from the MOSFET
channel into a splitted U-shaped floating gate.
The other is
based on hot carrier injection into the substrate and the
collection of these carriers by two seperate Hall drains. The
gener al
approaches to the proposed magnetodetectors are
related to the resultant magnetic lorentz force (Hall effect,
magnetoresistance effect,
carrier deflection). This magnetic
lorentz force is produced by the applied magnetic field to be
measured.
Theor-y,
design considerations, modeling, simula-
tion and experimental results have been inculded.
A new and
very precise technique employs a MOS transistor which is
forced to operate in its weak inversion region of operation.
In this case the channel current varies exponentially with
the gate to source voltage and the power consumption is very
low. These proposed magnetodetectors are characterized by the
following fea~ures:
a) Very high sensitivity (40 times greater than that
which have been already proposed in Literatures).
b)
Very wide dynamic range of measurement
( 10
to
-3
10 T).
c) A single 5v power supply is needed.